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US 2006/0141752 A1Published application
Methods for forming a P-type polysilicon layer in a semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorJae-Suk Lee
Life of this patent
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Abstract
A P-type polysilicon layer having a stable and desired resistivity is formed by alternately depositing a plurality of silicon atom layers and a plurality of group IIIA element atom layers on a semiconductor substrate by atomic layer deposition, and thereafter forming a P-type polysilicon layer by thermally diffusing the plurality of group IIIA element atom layers into the plurality of silicon atom layers. The plurality of group IIIA element atom layers may comprise Al, Ga, In, and/or Tl.
Claims5
A method for forming a P-type polysilicon layer in a semiconductor device, comprising:
- alternately depositing a plurality of silicon atom layers and a plurality of group IIIA element atom layers on a semiconductor substrate by atomic layer deposition;
- and
- forming a P-type polysilicon layer by thermally diffusing the plurality of group IIIA element atom layers into the plurality of silicon atom layers.
Dependencies are inferred from the claim text.