Semiconductor device with shallow trench isolation and a manufacturing method thereof
AssigneeDongbuAnam Semiconductor Inc.
InventorDae-Ho Jeong
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Abstract
An exemplary method of manufacturing a shallow trench isolation structure in a semiconductor device includes forming a first trench region by etching the semiconductor substrate to a predetermined depth, forming a first oxide layer on the entire surface of the semiconductor substrate so as to fill the first trench region, forming an epitaxial layer in an active region on the semiconductor substrate, and forming a second oxide layer so as to fill a gap between portions of the epitaxial layer. Consequently, a void due to incomplete gap-filling of conventional shallow trench isolation structures may be prevented by a two step gap-fill process using the epitaxial layer.
Claims20
A method of manufacturing a shallow trench isolation structure in a semiconductor device, comprising:
- forming a first trench region by etching a semiconductor substrate to a predetermined depth, using patterned pad nitride and pad oxide layers thereon as a mask;
- forming a first oxide layer so as to fill a gap of the first trench region;
- forming an epitaxial layer in an active region on the semiconductor substrate;
- and
- forming a second gap-fill oxide layer so as to fill a gap within the epitaxial layer.
A semiconductor device having a shallow trench isolation structure, comprising:
- a semiconductor substrate;
- a first oxide layer filling a first trench in the semiconductor substrate;
- an epitaxial layer in an active region on the semiconductor substrate;
- and
- a second oxide layer on the first oxide layer, filling a gap within the epitaxial layer.
Dependencies are inferred from the claim text.