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US 2006/0141735 A1Published application
Method for forming a MIM capacitor in a semiconductor device
AssigneeDongbuAnam Semiconductor Inc.
InventorJoo-Hyun Lee
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Abstract
In a method of forming a metal-insulator-metal (MIM) capacitor in a semiconductor device, after forming a capacitor insulation layer on a lower metal layer of the MIM capacitor, an upper electrode is formed by ion implantation into the capacitor insulation layer and silicidation, without a typical reactive ion etching process. Consequently, damage to the capacitor insulation layer can be minimized, and the area of the capacitor need not increase.
Claims7
A method of forming a metal-insulator-metal (MIM) capacitor in a semiconductor device, comprising:
- forming a capacitor insulation layer on a lower conductor layer of the MIM capacitor;
- forming a mask pattern on the capacitor insulation layer;
- forming a damaged part of the capacitor insulation layer by ion implantation using the mask pattern as an implantation mask;
- forming a metal layer on the damaged part of the capacitor insulation layer;
- and
- reacting the damaged part of the capacitor insulation layer with the metal layer so as to form an upper electrode of the MIM capacitor.
3 more elements
Dependencies are inferred from the claim text.