Method for fabricating semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorJae Lee
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Abstract
A method for fabricating a semiconductor device is provided, wherein a large MIM capacitor including an uneven surface if formed to increase capacitance. The method includes forming a polysilicon layer on a lower metal layer by plasma-enhanced chemical vapor deposition; forming an uneven surface in the polysilicon layer by etching the polysilicon layer with an isotropic etchant; forming an upper metal layer on the polysilicon layer; sequentially etching the upper metal layer and the polysilicon layer; and performing chemical-mechanical polishing after completing a gap-fill process on the upper metal layer.
Claims8
A method for fabricating a semiconductor device having a capacitor of a metal-insulator-metal structure, comprising:
- forming a polysilicon layer on a lower metal layer by plasma-enhanced chemical vapor deposition;
- forming an uneven surface in the polysilicon layer by etching the polysilicon layer with an isotropic etchant;
- forming an upper metal layer on the polysilicon layer;
- sequentially etching the upper metal layer and the polysilicon layer;
- and
- performing chemical-mechanical polishing after completing a gap-fill process on the upper metal layer.
Dependencies are inferred from the claim text.