Method of manufacturing flash memory device
AssigneeHynix Semiconductor Inc.
InventorSeok Lee
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Abstract
The present invention relates to a method of manufacturing a flash memory device. According to the method of manufacturing the flash memory device, a gate line is formed to have a structure in which a tunnel oxide film, a polysilicon layer for floating gate, dielectric films and a polysilicon layer for a control gate are stacked, etch damages are compensated for by means of an oxidization process, and a metal layer formed on the polysilicon layer for control gate is formed by means of a damascene process. Accordingly, it is possible to sufficiently compensate for etch damages, prevent generation of abnormal oxidization in a metal layer, and improve the reliability of a process and electrical characteristics of a device accordingly.
Claims10
A method of manufacturing a flash memory device, comprising the steps of:
- forming a gate line having a structure in which a tunnel oxide film, a first polysilicon layer, a dielectric film, a second polysilicon layer and a hard mask are stacked on a semiconductor substrate;
- compensating for etch damages by oxidizing sidewalls of the gate line by means of an oxidization process;
- forming an insulating film up to the height of the hard mask;
- removing the hard mask to form a damascene pattern on the second polysilicon layer;
- and
- forming a metal layer on the second polysilicon layer of the damascene pattern,
- wherein after the oxidization process is performed, the metal layer is formed, thereby preventing generation of abnormal oxidization in the metal layer.
Dependencies are inferred from the claim text.