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US 2006/0141710 A1Published application
NOR-type flash memory device of twin bit cell structure and method of fabricating the same
OwnerJae-man Yoon, Suk-kang Sung +3inventors
InventorsJae-man Yoon, Suk-kang Sung, Dong-gun Park, Choong-ho Lee, Tae-yong Kim
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Abstract
A NOR-type flash memory device comprises a plurality twin-bit memory cells arranged so that pairs of adjacent memory cells share a source/drain region and groups of four adjacent memory cells are electrically connected to each other by a single bitline contact.
Claims29
A NOR-type flash memory device, comprising:
- a plurality of active regions extending linearly in a first direction and formed on a substrate;
- a plurality of wordlines extending linearly in a second direction;
- a plurality of bitlines formed in the first direction;
- a plurality of memory cells formed on the active regions, each of the memory cells being defined by the intersection of one of the wordlines and one of the bitlines;
- and,
- a plurality of source/drain regions formed in the active regions, each of the source/drain regions being shared by two adjacent memory cells;
- wherein each of the source/drain regions is electrically connected to a corresponding bitline via a bitline contact;
- and,
- wherein the bitline contact is connected to four adjacent memory cells.
6 more elements
A method of fabricating a NOR-type flash memory device, the method comprising:
- defining a plurality of active regions extending linearly in a first direction on a substrate;
- forming a dielectric layer on the active regions;
- forming a plurality of wordlines extending linearly in a second direction perpendicular to the first direction;
- forming a plurality of source/drain regions between the wordlines in the active regions;
- forming a first insulating interlayer having a plurality of contact holes on the wordlines to expose two of the plurality of source/drain regions;
- forming a plurality of conductive contact plugs filling the contact holes to electrically connect the two source/drain regions;
- and,
- forming a plurality of bitlines, each electrically connected to one of the contact plugs via a single bitline contact.
5 more elements
Dependencies are inferred from the claim text.