Method for fabricating metal-insulator-metal capacitor of semiconductor device

A method for fabricating a metal-insulator-metal (MIM) capacitor of a semiconductor device, comprising steps of:

• (a) forming a structure in which a lower metal film pattern and a dielectric film pattern are sequentially deposited on a first insulating film on a semiconductor substrate;
• (b) simultaneously patterning the lower metal film pattern and the dielectric film pattern to form a first structure in a MIM capacitor region, in which a lower metal electrode film pattern and the dielectric film pattern are sequentially deposited, and a second structure in a metal line region, in which a lower metal line film pattern and the dielectric film pattern are sequentially deposited;
• (c) removing the dielectric film pattern in the metal line region using a wet etching process to expose the lower metal line film pattern;
• (d) forming a second insulating film to cover the dielectric film pattern in the MIM capacitor region and the lower metal line film pattern in the metal line region;
• (e) simultaneously forming a trench that exposes the dielectric film pattern in the MIM capacitor region and a via hole that exposes the lower metal line film pattern in the metal line region by passing through the second insulating film;
• and
• (f) forming an upper metal electrode film pattern and a via contact to respectively bury the trench and the via hole.