Method for fabricating semiconductor memory device having recessed storage node contact plug

Abstract

A semiconductor memory device and a method for fabricating a semiconductor memory device are provided. The method includes forming an inter-layer insulation layer having a storage node contact hole on a substrate; forming a pair of storage node contact spacers on sidewalls of the storage node contact hole; forming a storage node contact plug surrounded by the storage node contact spacers inside the storage node contact hole; recessing a surface of the storage node contact plug to a predetermined depth to expose upper portions of the storage node contact spacers; forming an etch stop insulation layer on the surface of the storage node contact plug and the inter-layer insulation layer; forming a trench opening a predetermined portion of the storage node contact plug and the storage node spacers by etching the etch stop insulation layer; forming a bottom electrode on the trench; and sequentially forming a dielectric layer and a top electrode on the bottom electrode.

Dependencies are inferred from the claim text.