Method of forming fine metal pattern and method of forming metal line using the same
AssigneeDongbuAnam Semiconductor Inc.
InventorKim Yong
Life of this patent
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Abstract
There are provided a method of forming a fine metal pattern and a method of forming a metal line using the same. In the method of forming a fine metal pattern, a substrate is prepared where a first interlayer insulating layer is formed. A via plug is formed on the first interlayer insulating layer. A plurality of sidewall buffer patterns are formed on the first interlayer insulating layer having the via plug, wherein the plurality of the sidewall buffer patterns are spaced apart from each other by a predetermined distance. The sidewall layer is deposited on the first interlayer insulating layer and the sidewall buffer patterns. The sidewall layer is etched such that sidewall patterns remains on sidewalls of the sidewall buffer patterns.
Claims20
A method of forming a fine metal pattern, the method comprising:
- preparing a substrate where a first interlayer insulating layer is formed;
- forming a via plug on the first interlayer insulating layer;
- forming a plurality of sidewall buffer patterns on the first interlayer insulating layer having the via plug, wherein the plurality of the sidewall buffer patterns are spaced apart from each other by a predetermined distance;
- depositing the sidewall layer on the first interlayer insulating layer and the sidewall buffer patterns;
- and
- etching the sidewall layer such that sidewall patterns remains on sidewalls of the sidewall buffer patterns.
Dependencies are inferred from the claim text.