Manufacturing method of pixel structure of thin film transistor liquid crystal display

A method of fabricating a pixel structure of a thin film transistor (TFT) liquid crystal (LCD), comprising:

• sequentially forming a transparent conductive layer and a first metal layer over a substrate;
• performing a first masking and pholithography process for patterning the first metal layer and the transparent conductive layer to define a gate pattern and a pixel electrode pattern;
• sequentially forming a gate isolating layer and a semiconductor layer over the substrate for covering the gate pattern and the pixel electrode pattern;
• performing a second masking process for removing the first metal layer of the pixel electrode pattern, wherein the gate isolating layer and the semiconductor layer retained over the gate pattern;
• forming a second metal layer over the substrate;
• performing a third masking process for patterning the second metal layer and forming a source pattern and a drain pattern over the retained semiconductor layer;
• forming a passivation layer over the substrate;
• forming a photoresist layer over the passivation layer;
• performing a back side exposure process and a patterning process by using the gate pattern, the source pattern and the drain pattern as a mask for patterning the photoresist layer;
• performing an etching step for etching the passivation layer by using the patterned the photoresist layer as a mask to expose the transparent conductive layer of the pixel electrode pattern;
• and
• removing the photoresist layer.