Supercritical developing for a lithographic process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Yu Chang, Burn Lin, Chi-Wen Liu
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Abstract
A method of creating a resist image on a semiconductor substrate includes exposing a layer of photoresist on the semiconductor substrate and developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base such as Tetra-Methyl Ammonium Hydroxide (TMAH). Additionally, the developed photoresist can be cleaned using a second fluid including supercritical carbon dioxide and a solvent such as methanol, ethanol, isopropanol, and xylene.
Claims23
A method of creating a resist image on a semiconductor substrate, comprising:
- exposing a layer of photoresist on the semiconductor substrate;
- developing the exposed layer of photoresist using a fluid including supercritical carbon dioxide and a base.
A method of creating a resist image on a semiconductor substrate, comprising:
- exposing a layer of photoresist on the semiconductor substrate;
- developing the exposed layer of photoresist using a first fluid including supercritical carbon dioxide and a base;
- and
- cleaning the developed photoresist using a second fluid including supercritical carbon dioxide.
A method of creating a resist image on a semiconductor substrate, comprising:
- exposing a layer of photoresist on the semiconductor substrate;
- performing a first process on the exposed layer of photoresist using a first supercritical fluid including a constituent having a low surface tension and a constituent with properties for converting the exposed layer into a water-soluble layer;
- and
- performing a second process on the water-soluble layer of photoresist using a third supercritical fluid including a constituent having a low surface tension and water.
A method of creating a resist image on a semiconductor substrate, comprising:
- exposing a layer of photoresist on the semiconductor substrate;
- performing a first process on the exposed layer of photoresist using a first supercritical fluid including a constituent having a low surface tension and a constituent with properties for converting the exposed layer into a water-soluble layer;
- and
- performing a second process on the water-soluble layer of photoresist using a fluid including at least one of water or surfactant.
Dependencies are inferred from the claim text.