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US 2006/0141390 A1Published application
Composition for coating a photoresist pattern
AssigneeHynix Semiconductor Inc.
InventorsGeun Lee, Seung Moon
Life of this patent
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Abstract
A composition for coating a photoresist pattern includes water and a compound including a repeating unit represented by Formula 1. The composition is coated on a previously formed pattern, thereby effectively reducing a size of a space or contact hole of photoresist pattern. A method for forming a photoresist pattern using the composition is usefully applied to all semiconductor processes for forming a fine pattern. wherein R1 to R6, R′, R″ and n are defined in the specification.
Claims19
A composition for coating a photoresist pattern comprising water and a water-soluble polymer including a repeating unit of Formula 1:
- wherein R1 to R6 are individually selected from the group consisting of H, C1-C10 alkyl, a halogen element, and a —CN group;
- R′ and R″ are individually selected from the group consisting of H, C1-C20 alkyl and C7-C20 alkylaryl;
- and
- n is an integer ranging from 10 to 3,000.
1 more element
Dependencies are inferred from the claim text.