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US 2006/0141372 A1Published application
Mask pattern and method for forming resist pattern using mask pattern thereof
AssigneeSharp Kabushiki Kaisha
InventorShinji Kobayashi
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Abstract
A mask pattern for multiple exposure for forming a resist pattern with an unvarying pattern pitch on a semiconductor wafer, which is utilized as in case where a mask pattern under a design having the width of an aperture pattern smaller than the width of a light-shielding pattern is used at one exposure, wherein the mask pattern for multiple exposure has a pattern pitch that is the same as that of the mask pattern under design and has the width of an aperture pattern greater than the width of a light-shielding pattern.
Claims9
1-8. (canceled)
A method of forming a resist pattern, the method comprising:
- a) exposing a resist on a semiconductor wafer using a multiple exposure mask pattern,
- b) shifting the semiconductor wafer or the multiple exposure mask pattern by a microscopic amount,
- c) repeating a) and b) a plurality of times;
- and
- d) removing a region of the resist where multiple exposures have been performed by developing when a resist pattern with an unvarying pattern pitch is formed.
2 more elements
Dependencies are inferred from the claim text.