Method for correcting pattern data and method for manufacturing semiconductor device using same

A method for manufacturing a semiconductor device comprising the step of:

• performing exposures by using a photomask formed, with an aim of making a correction to pattern data affected by a proximity effect when a pattern is formed on a photomask or wafer according to design data for a semiconductor device, by detecting, according to said design data, a space portion being placed on said photomask or wafer and having a specified size occurring between patterns facing each other in a first direction, by producing a pattern data corresponding to an assist pattern that fills said space portion, by detecting an edge to be corrected in a position being opposite to an edge of said assist pattern extending in a second direction between said patterns facing each other, out of framing portions of said pattern being placed in parallel and near to said assist pattern, by making a correction being independent of a correction to be made to other edge of said framing portion to the detected edge to be corrected, and by removing said assist pattern.

A method for manufacturing a semiconductor device comprising the step of:

• performing exposures by using a photomask formed, with an aim of making a correction to pattern data affected by a proximity effect when a pattern is formed on a photomask or wafer according to design data for a semiconductor device, by extracting a region, as an isolated edge, in which a space portion occurring between second patterns facing each other exists within a specified distance in a first direction, out of edges in framing portions of a first pattern, by producing pattern data corresponding to an assist pattern that fills said space portion, by extracting an edge of said assist pattern extending between said first and second patterns facing each other in a second direction, by making a correction to data of said isolated edge according to a length of said edge of said assist pattern and an interval between said assist pattern and said isolated edge and by removing said assist pattern.