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US 2006/0139588 A1Published application
System and method for determining maximum operational parameters used in maskless applications
AssigneeASML Netherlands B.V.
InventorMartinus Hoeks
Life of this patent
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Abstract
A lithographic method and apparatus used to pattern an object. An illumination source supplies a beam of radiation. A pattern generator forms a pattern to pattern a beam of radiation using the pattern data. A projection system projects the patterned beam onto a target portion of a substrate supported by a stage during an exposure operation. A control module determines a respective maximum operational parameter for the illumination source, the pattern generator, and/or the stage.
Claims15
A lithography system, comprising:
- an illumination source that supplies a beam of radiation;
- a pattern generator that patterns the beam of radiation;
- a projection system that projects the patterned beam onto a target portion of a substrate supported by a stage during an exposure operation;
- and
- a control module coupled to at least one of the illumination source, the pattern generator, and the stage, the control module determining a respective maximum operational parameter for at least one of the illumination source, the pattern generator, and the stage.
2 more elements
A method for using a lithography system, comprising:
- (a) determining a maximum value for at least one operational parameter of the maskless lithography system before an exposure operation;
- (b) using the maximum value of the at least one operational parameter determined in step (a) to set the respective at least one operational parameter of the maskless lithography system;
- (c) patterning a beam of radiation using a pattern generator of the maskless lithography system;
- and
- (d) projecting the patterned beam of radiation onto a target portion of a substrate supported by a stage during the exposure operation.
2 more elements
Dependencies are inferred from the claim text.