Method for forming an intermetal dielectric layer in a semiconductor device using HDP-CVD, and a semiconductor device manufactured thereby
AssigneeDongbuAnam Semiconductor Inc.
InventorJune Lee
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Abstract
A method for forming an intermetal dielectric layer in a semiconductor device using high density plasma chemical vapor deposition (HDP-CVD), and a semiconductor device manufactured thereby. The method includes the steps of: (a) forming a metal wiring including at least one via-hole by patterning a metal layer formed on a semiconductor substrate; (b) forming a nitride liner protecting the metal wiring; and (c) forming the intermetal dielectric layer on and between the metal wiring using HDP-CVD.
Claims12
A method for forming an intermetal dielectric layer of a semiconductor device using high density plasma chemical vapor deposition (HDP-CVD), said method comprising the steps of:
- (a) forming a metal wiring including at least one via-hole by patterning a metal layer formed on a semiconductor substrate;
- (b) forming a nitride liner protecting the metal wiring;
- and
- (c) forming the intermetal dielectric layer on and between the metal wiring using the HDP-CVD.
Dependencies are inferred from the claim text.