Copper gate electrode of liquid crystal display device and method of fabricating the same
AssigneeAu Optronics Corporation
InventorsYu-Wei Liu, Wen-Ching Tsai, Kuo-Yu Huang, Hui-Fen Lin
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Abstract
A copper gate electrode, applied in a thin-film-transistor liquid crystal display (LCD) device, at least comprises a patterned copper layer formed on a glass substrate, and a barrier layer formed on the patterned copper layer. The barrier layer comprises at least one of nitrogen and phosphorus, or comprises an alloy formularized as M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).
Claims37
A copper gate electrode for a thin film transistor liquid crystal display (TFT-LCD), comprising:
- a patterned copper layer formed on a substrate;
- and
- a barrier layer, formed on the patterned copper layer, and the barrier layer comprising at least one of nitrogen and phosphorus.
A copper gate electrode for a thin film transistor liquid crystal display (TFT-LCD), comprising:
- a patterned copper layer formed on a substrate;
- and
- a barrier layer, formed on the patterned copper layer, and the barrier layer comprising an alloy of M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).
A method for fabricating a copper gate electrode, comprising the steps of:
- providing a substrate;
- forming a copper layer on the substrate;
- patterning the copper layer to form a patterned copper layer;
- and
- forming a barrier layer on the patterned copper layer to cover the patterned copper layer, and the barrier layer comprising at least one of nitrogen and phosphorus.
A method for fabricating a copper gate electrode, comprising the steps of:
- providing a substrate;
- forming a copper layer on the substrate;
- patterning the copper layer to form a patterned copper layer;
- and
- forming a barrier layer on the patterned copper layer to cover the patterned copper layer, and the barrier layer comprising an alloy formularized as M1M2R wherein M1 is cobalt (Co) or molybdenum (Mo), M2 is tungsten (W), molybdenum (Mo), rhenium (Re) or vanadium (V), and R is boron (B) or phosphorus (P).
Dependencies are inferred from the claim text.