Semiconductor structures utilizing thin film resistors and tungsten plug connectors and methods for making the same

A semiconductor structure comprising:

• a first conductive layer of an interconnect stack;
• a first insulating layer overlying said first conductive layer, said first insulating layer comprising a dielectric material and spin-on-glass and having a first substantially planar surface;
• a thin film resistor disposed overlying said first insulating layer;
• a second insulating layer overlying said thin film resistor and said first substantially planar surface, said second insulating layer having a second substantially planar surface;
• a second conductive layer overlying said second substantially planar surface;
• a conductive via disposed between said second conductive layer and said thin film resistor, said conductive via electrically coupling said second conductive layer and said thin film resistor;
• and
• a conductive plug disposed between said second conductive layer and said first conductive layer and electrically coupling said second conductive layer and said first conductive layer, said conductive plug comprising tungsten.

A method for fabricating a semiconductor structure, the method comprising:

• providing an interconnect stack disposed at least partially within at least one dielectric material;
• forming a first insulating layer overlying said interconnect stack such that a surface of said first insulating layer is substantially planar;
• depositing a second insulating layer overlying said first insulating layer;
• forming a thin film resistor overlying said second insulating layer;
• depositing a third insulating layer overlying said second insulating layer and said resistor;
• removing a portion of said third insulating layer so that a surface of said third insulating layer is substantially planar;
• anisotropically etching said third insulating layer to form a first via to said interconnect stack;
• depositing a tungsten-comprising fill material within said first via and overlying said substantially planar surface of said third insulating layer;
• removing a portion of said fill material to form a conductive plug electrically coupled to said interconnect stack;
• wet etching said third insulating layer to form a second via to said thin film resistor;
• and
• depositing a conductive layer overlying said third insulating layer, said conductive plug, and within said second via.