Semiconductor device with a fuse part and method of manufacturing the same

A method of forming a fuse part in a semiconductor device, comprising:

• forming a first insulation layer on a metal line in a semiconductor device;
• forming a first photosensitive layer pattern on the first insulation layer in order to form a fuse part;
• etching the first insulation layer by using the first photosensitive layer pattern to a degree that the metal line is exposed;
• selectively forming a selective metal layer on the exposed metal line;
• forming a fuse metal layer on the selective metal layer;
• forming a fuse metal layer pattern by using a second photosensitive layer pattern which is formed on the fuse metal layer;
• and
• forming a second metal insulation layer on the fuse metal layer pattern.

A semiconductor device with a fuse part, comprising:

• a via hole which is connected to a metal line and composed of a metal material;
• a selective metal layer which is contacted with the via hole;
• and
• a fuse metal layer which is contacted with the selective metal layer so as to interconnect adjacent selective metal layers.