Method and structure for implanting bonded substrates for electrical conductivity
AssigneeSilicon Genesis Corporation
InventorFrancois Henley
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AssigneeSilicon Genesis Corporation
InventorFrancois Henley
Estimating the term…
A partially completed multi-layered substrate, e.g., silicon on silicon. The substrate has a thickness of material from a first substrate. The thickness of material comprises a first face region. The substrate has a second substrate having a second face region. Preferably, the first face region of the thickness of material is joined to the second face region of the second substrate. The substrate has an interface region formed between the first face region of the thickness of material and the second face region of the second substrate. A plurality of particles are implanted within a portion of the thickness of the material and a portion of the interface region to electrically couple a portion of the thickness of material to a portion of the second substrate.
A process for forming multi-layered substrates, the process comprising:
A partially completed multi-layered substrate comprising:
Dependencies are inferred from the claim text.