Semiconductor device and fabricating method thereof
OwnerJae Kiminventor
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Abstract
A semiconductor device and semiconductor device fabricating method may enhance device reliability by forming a chemical oxide buffer layer prior to forming a high-k gate oxide layer. The semiconductor device includes a semiconductor substrate; a chemical oxide buffer layer on the semiconductor substrate; a high-k gate oxide layer on the buffer layer; a gate electrode formed on the high-k gate oxide layer; and lightly doped drain and source/drain regions formed in a surface of the semiconductor substrate beside the gate electrode. By forming the buffer layer of chemical oxide on the semiconductor substrate and by forming the gate oxide layer on the buffer layer, a stable high-k material can be provided at the interface between the high-k gate oxide layer and the semiconductor substrate.
Claims18
A semiconductor device, comprising:
- a semiconductor substrate;
- a chemical oxide buffer layer on the semiconductor substrate;
- a high-k gate oxide layer on the buffer layer;
- a gate electrode on the high-k gate oxide layer;
- and
- lightly doped drain and source/drain regions in a surface of the semiconductor substrate adjacent to the gate electrode.
A method of fabricating a semiconductor device, comprising:
- forming a chemical oxide buffer layer on a semiconductor substrate;
- forming a high-k gate oxide layer on the buffer layer;
- forming a gate electrode on the high-k gate oxide layer;
- forming lightly doped drain regions in a first surface of the semiconductor substrate adjacent to the gate electrode;
- and
- forming source/drain regions in a second surface of the semiconductor substrate adjacent to the gate electrode.
Dependencies are inferred from the claim text.