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US 2006/0138560 A1Published application
Metal oxide semiconductor transistor and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorsJun-Gi Choi, Hi-Hyun Han
Life of this patent
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Abstract
A metal oxide semiconductor (MOS) transistor includes a source region having at least one source contact; a drain region having at least one drain contact; and a gate provided between the source region and the drain region, wherein the number of source contacts included in the source region is different from the number of drain contacts included in the source region.
Claims13
A metal oxide semiconductor (MOS) transistor, comprising:
- a source region having at least one source contact;
- a drain region having at least one drain contact;
- and
- a gate provided between the source region and the drain region,
- wherein the number of source contacts included in the source region is different from the number of drain contacts included in the source region.
2 more elements
A constant voltage generation circuit, comprising:
- a first MOS transistor for receiving a power supply voltage;
- a second MOS transistor for receiving the power supply voltage, a gate of the second MOS transistor being coupled to a gate of the first MOS transistor;
- a third MOS transistor provided between the first MOS transistor and a ground;
- and
- a fourth MOS transistor provided between the second MOS transistor and the ground, a gate of the third MOS transistor being coupled to a gate of the fourth MOS transistor,
- wherein each MOS transistor includes a source region having at least one source contact, a drain region having at least one drain contact and a gate, the number of source contacts included in the source region being different from the number of drain contacts included in the drain region.
3 more elements
Dependencies are inferred from the claim text.