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US 2006/0138556 A1Published application
Gate dielectric and method
AssigneeTexas Instruments Incorporated
InventorsMark Visokay, Antonio Rotondaro, Luigi Colombo
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Abstract
A MOSFET structure with high-k gate dielectric layer and silicon or metal gates, amorphizing treatment of the high-k gate dielectric layer as with a plasma or ion implantation.
Claims11
A method of fabrication of an integrated circuit, comprising the steps of:
- providing a substrate;
- forming a high-k dielectric layer on said substrate;
- amorphizing said dielectric layer by ion bombardment;
- forming gate material on said dielectric layer;
- and
- forming gates from said gate material.
3 more elements
An integrated circuit, comprising:
- a substrate;
- gates on gate dielectrics on said substrate, said gate dielectrics an amorphous metal silicate.
Dependencies are inferred from the claim text.