Semiconductor on insulator substrate and devices formed therefrom
AssigneeAdvanced Micro Devices, Inc.
InventorQi Xiang
Life of this patent
Estimating the term…
Abstract
A semiconductor on insulator (SOI) device is comprised of a layer of a dielectric material having a perovskite lattice, such as a rare earth scandate. The dielectric material is selected to have an effective lattice constant that enables growth of semiconductor material having a diamond lattice directly on the dielectric. Examples of the rare earth scandate dielectric include gadolinium scandate (GdScO3), dysprosium scandate (DyScO3), and alloys of gadolinium and dysprosium scandate (Gd1-xDyxScO3).
Claims43
A semiconductor on insulator (SOI) device comprising:
- a substrate comprising a layer of gadolinium scandate (GdScO3) dielectric material;
- a region of a first semiconductor material formed on the gadolinium scandate (GdScO3) layer;
- and
- a first MOSFET having a channel comprising at least a portion of the region of the first semiconductor material.
A semiconductor on insulator (SOI) device comprising:
- a substrate comprising a layer of dysprosium scandate (DyScO3) dielectric material;
- a region of a first semiconductor material formed on the gadolinium scandate (GdScO3) layer;
- and
- a first MOSFET having a channel comprising at least a portion of the region of the first semiconductor material.
A semiconductor on insulator (SOI) device comprising:
- a substrate comprising a layer of a dielectric material, wherein the dielectric material comprises an alloy of gadolinium and dysprosium scandate (Gd(1-x)DyxScO3);
- a layer of a first semiconductor material formed on the layer of the dielectric material;
- and
- a first MOSFET having a channel comprising at least a portion of the region of the first semiconductor material.
Dependencies are inferred from the claim text.