Process for treating a semiconductor wafer with a gaseous medium, and semiconductor wafer treated by this process
AssigneeSiltronic AG
InventorsMaximilian Stadler, Guenter Schwab, Christoph Frey, Peter Stallhofer
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Abstract
A process for treating a semiconductor wafer with a gaseous medium containing hydrogen fluoride and at least one oxidizing agent which oxidizes the surface of the semiconductor wafer, involves flowing the gaseous medium onto the surface of the semiconductor wafer at a relative velocity in the range from 40 mm/s to 300 m/s. Semiconductor wafers and an SOI wafers prepared by the process have a low roughness and metal concentration in the absence of a subsequent polishing step.
Claims15
A process for treating a semiconductor wafer with a gaseous medium, containing hydrogen fluoride and at least one oxidizing agent which oxidizes the surface of the semiconductor wafer, comprising flowing the gaseous medium onto the surface of the semiconductor wafer at a relative velocity in the range from 40 mm/s to 300 m/s.
An etched semiconductor wafer with an RMS roughness of less than 70 nm, and a metal concentration of less than 1.0×1010 at/cm2 for each of the metals iron, copper, nickel, chromium, zinc and calcium, determined by poly-UTP.
An etched SOI wafer, comprising a silicon layer with a layer thickness of 20 nm or less, an RMS roughness of 0.2 nm or less and a metal concentration of less than 1.0×1010 at/cm2 for each of the metals iron, copper, nickel, chromium, zinc and calcium, determined by poly-UTP.
Dependencies are inferred from the claim text.