Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• stacking a first gate insulating film, a first conductive film serving as a floating gate, a second gate insulating film, and a second conductive film serving as a control gate on a semiconductor substrate, thereby forming a gate wiring pattern of a stacked gate structure;
• removing part of the second conductive film and the second gate insulating film, thereby forming a contact hole reaching an upper surface of the first conductive film from an upper surface of the second conductive film;
• and
• burying a third conductive film in the contact hole.

A method of manufacturing a semiconductor device, comprising:

• forming a first conductive film serving as a floating gate on a semiconductor substrate via a first gate insulating film;
• selectively etching the first conductive film serving as the floating gate so as to remove at least an unnecessary portion in a gate-width direction of the floating gate,
• forming a second conductive film serving as a control gate on the substrate and on the first conductive film via a second gate insulating film;
• selectively etching the second conductive film together with the first conductive film, thereby forming a gate wiring pattern for each of a nonvolatile semiconductor memory cell and a transistor other than the memory cell;
• selectively etching the second conductive film and second gate insulating film by lithography in accordance with the gate wiring pattern in the transistor other than the memory cell, thereby forming a contact hole reaching an upper surface of the first conductive film from an upper surface of the second conductive film;
• and
• burying a third conductive film in the contact hole.