Capacitor structure and fabricating method thereof
AssigneeDongbuAnam Semiconductor Inc.
InventorChee Choi
Life of this patent
Estimating the term…
Abstract
Disclosed are a vertical-type capacitor and a formation method thereof. The capacitor includes a first electrode wall and a second electrode wall perpendicular to a semiconductor substrate, and at least one dielectric layer on the substrate to insulate the first electrode wall from the second electrode wall. The first electrode wall includes a plurality of first conductive layers and a plurality of first contacts, the plurality of first conductive layers being interconnected with each other by each of the plurality of first contacts. The second electrode wall includes a plurality of second conductive layers and a plurality of second contacts, the plurality of second conductive layers being interconnected with each other by each of the plurality of second contacts.
Claims11
A capacitor, comprising:
- a first electrode wall perpendicular to a semiconductor substrate, including a plurality of first conductive layers and a plurality of first contacts, the plurality of first conductive layers being interconnected with each other by each of the plurality of first contacts;
- a second electrode wall perpendicular to the semiconductor substrate, including a plurality of second conductive layers and a plurality of second contacts, the plurality of second conductive layers being interconnected with each other by each of the plurality of second contacts;
- and
- at least one dielectric layer on the substrate to insulate the first electrode wall from the second electrode wall.
A method for forming a capacitor in a semiconductor device, comprising the steps of:
- (a) forming a dielectric layer;
- (b) forming at least two trenches in the dielectric layer, the at least two trenches being separated from each other;
- and
- (c) filling a conductive layer in the at least two trenches;
- (d) repeating steps (a) to (c) to form at least two electrode walls perpendicular to a main surface of a semiconductor substrate, each electrode wall having multiple conductive layers stacked over each other, wherein the corresponding conductive layers of the at least two electrode walls being separated from each other by the corresponding dielectric layers.
A capacitor, comprising:
- a first electrode wall perpendicular to a main surface of a semiconductor substrate;
- a second electrode wall perpendicular to the main surface of the semiconductor substrate, and separated from the first electrode wall by a predetermined distance;
- and
- a dielectric layer between the first and second electrode walls.
Dependencies are inferred from the claim text.