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AssigneeKoninklijke Philips Electronics N.V.
InventorsRobert Lander, Dirk Knotter
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The invention relates to a method of manufacturing a semiconductor device (10) with a substrate (1) and a semiconductor body (2) comprising a first (N-MOS)PET (3) with a first channel region (3A) and a first gate electrode (3B) which includes a first conductor and which is separated from the channel region by a dielectric layer (4), and comprising a second (P-MOS)FET (5) with a second channel region (5A) and a second gate electrode (5B) which includes a second conductor that is different from the first conductor and which is separated from the channel region (5A) by a dielectric layer (4), wherein to form the gate electrodes (3B, 5B) a first conductor layer (33) is deposited on the semiconductor body (2) provided with the dielectric layer (4), which layer (33) is subsequently removed outside the first channel region (3A) after which a second conductor layer (55) is deposited on the semiconductor body (2), and wherein before the first conductor layer (33) is deposited, an intermediate layer (6) is deposited on the dielectric layer (4). According to the invention, a material for the intermediate layer (6) is chosen which is selectively etchable with respect to the dielectric layer (4), and before the deposition of the first conductor layer (33) the intermediate layer (6) is removed at the location of the firs channel region (3A), and after the deposition of the first conductor layer (33) and the removal thereof outside the first channel region (3A) and before the deposition of the second conductor layer (55), the intermediate layer (6) is removed at the location of the second channel region (5A). Thus, FETs are obtained in a simple manner and without damage to their gate dielectric. Preferably, a further intermediate layer (8) is deposited on the intermediate layer (6) which is selectively etchable with respect thereto.
A method of manufacturing a semiconductor device with a substrate and a semiconductor body the semiconductor device including a first field effect transistor with a first source, drain and channel region of a first conductivity type and a first gate electrode including a first conductor the first conductor is separated from the channel region by a dielectric layer, and the semiconductor device further including a second field effect transistor with a second source, drain and channel region of a second conductivity type, opposite to the first conductivity type, and a second gate electrode includes a second conductor that is different from the first conductor, and the second conductor is separated from the channel region by a dielectric layer, the method comprising:
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