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US 2006/0138474 A1Published application
Recess gate and method for fabricating semiconductor device with the same
OwnerJae-Seon Yu, Phil-Goo Konginventors
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Abstract
A recess gate and a method for fabricating a semiconductor device with the same are provided. The recess gate includes: a substrate; a recess formed with a predetermined depth in a predetermined portion of the substrate; a gate insulation layer formed over the substrate with the recess; a gate polysilicon layer formed on the gate insulation layer; a gate metal layer being formed on the gate polysilicon layer and filling the recess; and a gate hard mask formed on the gate metal layer.
Claims17
A recess gate of a semiconductor device, comprising:
- a substrate;
- a recess formed with a predetermined depth in a predetermined portion of the substrate;
- a gate insulation layer formed over the substrate;
- a gate polysilicon layer formed on the gate insulation layer;
- a gate metal layer formed on the gate polysilicon layer and filling the recess;
- and
- a gate hard mask formed on the gate metal layer.
4 more elements
A method for fabricating a semiconductor device, comprising the steps of:
- forming a recess by etching a substrate to a predetermined depth;
- forming a gate insulation layer over the substrate;
- forming a gate polysilicon layer on the gate insulation layer;
- forming a gate metal layer on the gate polysilicon layer such that the gate metal layer fills the recess;
- forming a gate hard mask layer on the gate metal layer;
- and
- sequentially etching the gate hard mask layer, the gate metal layer and the gate polysilicon layer to form a recess gate having bottom portion filled into the recess.
4 more elements
Dependencies are inferred from the claim text.