Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display

A flat panel display, comprising:

• a substrate;
• at least one thin film transistor, each of which is formed on the substrate and comprises a gate electrode, a source electrode and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode and insulated from the gate electrode;
• and
• a pixel electrode electrically connected to at least one of the source and the drain electrodes of the thin film transistor,
• wherein the organic semiconductor layer comprises a transformed region around at least the channel region of the organic semiconductor layer, wherein the transformed region has a crystal structure which differs from other regions of the organic semiconductor layer.

A method of manufacturing a flat panel display, comprising:

• forming a thin film transistor comprising a gate electrode formed on a substrate;
• a source electrode and a drain electrode, each insulated from the gate electrode;
• and an organic semiconductor layer insulated from the gate electrode and coupled to the source and drain electrodes;
• and
• forming a pixel electrode electrically connected to one of the source and the drain electrodes of the thin film transistor,
• the method comprises irradiating with light the area around at least a channel region of the organic semiconductor layer wherein the conductivity of the organic semiconductor layer is reduced.

A method of manufacturing a flat panel display, comprising:

• forming a thin film transistor comprising a gate electrode formed on a substrate, a source electrode and a drain electrode, each insulated from the gate electrode;
• and an organic semiconductor layer insulated from the gate electrode and coupled to the source and the drain electrodes;
• and
• forming a pixel electrode electrically connected to one of the source and the drain electrodes of the thin film transistor,
• the method comprises performing a thermal process on the organic semiconductor layer at least near a channel region of the organic semiconductor layer after forming the organic semiconductor layer, wherein the conductivity of the organic semiconductor layer is reduced.