Method for fabricating a metal-insulator-metal capacitor
AssigneeDongbuAnam Semiconductor Inc.
InventorSang Kim
Life of this patent
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Abstract
A method for correcting angle zero position of an ion implantation equipment. The method includes loading a semiconductor wafer into the ion implantation equipment, implanting ions into the wafer with varying angle, measuring thermal wave and sheet resistance value of the wafer, and correcting the angle zero position with reference to points at which the measured thermal wave or sheet resistance value is minimized.
Claims6
A method for correcting an angle zero position of an ion implantation equipment, said method comprising the steps of:
- loading a semiconductor wafer into the ion implantation equipment;
- implanting ions into the wafer with varying angle;
- measuring thermal wave values of the wafer;
- and
- correcting the angle zero position with reference to points at which the measured thermal wafer value is at a minimum.
A method for correcting an angle zero position of an ion implantation equipment, said method comprising the steps of:
- loading a semiconductor wafer into the ion implantation equipment;
- implanting ions into the wafer with varying angles;
- measuring sheet resistance value of the wafer;
- and
- correcting the angle zero position with reference to points at which the measured sheet resistance value is at a minimum.
Dependencies are inferred from the claim text.