Semiconductor device fabrication method
AssigneeHitachi Cable, Ltd.
InventorGenta Koizumi
Life of this patent
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Abstract
A semiconductor device fabrication method applies a diazo novolac photoresist to a semiconductor wafer, followed by light exposure of its entire surface to form an underlying resist layer; forms a surface resist layer thereover; performs patterned-light exposure and heat treatment to the photoresist film consisting of the two resist layers formed; and exposes its entire surface to light, followed by development to process the photoresist film into a resist pattern, where the surface resist layer is in an inverse tapered shape, while the underlying resist layer is in an undercut shape relative to the surface resist layer.
Claims9
A semiconductor device fabrication method, comprising the steps of:
- forming, on a substrate, a positive type photoresist film comprising an underlying resist layer formed of a diazo novolac photoresist and a surface resist layer for being inverted into a negative type by only heat treatment after light exposure;
- inverting the surface resist layer into a negative type by applying a mask and performing light exposure and heat treatment;
- exposing the entire surface of the photoresist film to light;
- developing the entire-surface-exposed photoresist film to thereby be processed into a resist pattern, where the surface resist layer is in an inverse tapered shape, while the underlying resist layer is in an undercut shape relative to the surface resist layer;
- forming, on the resist pattern, a metal film for forming electrodes and wiring;
- and
- performing a patterning by dissolving the resist pattern with a solvent and removing the metal film on the resist pattern.
A semiconductor device fabrication method, comprising the steps of:
- forming, on a substrate, a positive type photoresist film comprising an underlying resist layer formed of a diazo novolac photoresist and a surface resist layer for being inverted into a negative type by only heat treatment after light exposure;
- inverting the surface resist layer into a negative type by applying a mask and performing light exposure and heat treatment;
- exposing the entire surface of the photoresist film to light;
- developing the entire-surface-exposed photoresist film to thereby be processed into an inverse tapered-shape resist pattern;
- forming, on the resist pattern, a metal film for forming electrodes and wiring;
- and
- performing a patterning by dissolving the resist pattern with a solvent and removing the metal film on the resist pattern.
A resist pattern, comprising:
- a surface resist layer and an underlying resist layer formed on a substrate, wherein:
- the surface resist layer is in an inverse tapered shape and the underlying resist layer is in an undercut shape relative to the surface resist layer.
Dependencies are inferred from the claim text.