Chemical vapor deposition precursors for deposition of tantalum-based materials
AssigneeAdvanced Technology Materials, Inc.
InventorsSmuruthi Kamepalli, Thomas Baum
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Abstract
Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.
Claims19
A tantalum precursor vapor, comprising vapor of a compound of the formula:
- wherein:
- n is an integer having a value of from 1 to 5;
- each R can be the same or different and each is independently selected from the group consisting of D, H, CH3, C2H5, i-C3H7, C4H9 and Si(R″)3 wherein each R″ is independently selected from H and C1-C4 alkyl;
- and
- each of R′ can be the same or different and each is independently selected from the group consisting of D, H, C1-C4 alkyl, and Si(R″)3 wherein each R″ is independently selected from H and C1-C4 alkyl;
- with the provisos that (i) each of the R groups and R′ are not simultaneously all H, and (ii) when each of R′ is H, and n is 1, both R groups are not simultaneously trimethylsilyl.
A tantalum precursor vapor, comprising vapor of a compound selected from among compounds of the formula:
- wherein TMS is trimethylsilyl and R′ is selected from the group consisting of D, C1-C4 alkyl, and Si(R″)3 wherein each R″ is independently selected from H and C1-C4 alkyl.
A method of synthesizing a cyclopentadienyl tantalum compound, comprising conducting the following reaction:
- [(R)nCp]2TaH3+R′Li→(RCp)2TaH2R′+½H2
- wherein:
- each R can be the same or different and each is independently selected from the group consisting of D, H, CH3, C2H5, i-C3H7, C4H9 and Si(R″)3 wherein each R″ is independently selected from H and C1-C4 alkyl;
- and
- each of R′ can be the same or different and each is independently selected from the group consisting of D, H, C1-C4 alkyl, and Si(R″)3 wherein each R″ is independently selected from H and C1-C4 alkyl.
A method of synthesizing a cyclopentadienyl tantalum compound, comprising conducting the following reaction:
- (RCp)2TaH3+RSiH3→(RCp)2TaH2(RSiH2)+H2
- wherein:
- each R can be the same or different and each is independently selected from the group consisting of D, H, CH3, C2H5, i-C3H7, C4H9 and Si(R″)3 wherein each R″ is independently selected from H and C1-C4 alkyl.
A method of synthesizing a cyclopentadienyl tantalum compound, comprising conducting the following reaction:
- (RCp)2TaH3+2R″SiH3→(RCp)2TaH(R″SiH2)2+H2
- wherein:
- each R can be the same or different and each is independently selected from the group consisting of D, H, CH3, C2H5, i-C3H7, C4H9 and Si(R″)3 wherein each R″ is independently selected from H and C1-C4 alkyl.
Dependencies are inferred from the claim text.