Method for forming a metal contact in a semiconductor device having a barrier metal layer formed by homogeneous deposition

Abstract

Low resistance, high performance, and a longer lifetime of a semiconductor device may be achieved when a metal contact is formed in a semiconductor device by a method including: forming a lower metal layer on a semiconductor substrate; forming an interlayer insulating layer having a via hole on the lower metal layer; forming a first metal layer on the interlayer insulating layer and an interior of the via hole; forming a second metal layer on the first metal layer by a homogeneous deposition method in which deposition, densification, and plasma treatment are simultaneously performed; and forming an upper metal layer on the second metal layer so as to fill the via hole.

Dependencies are inferred from the claim text.