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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYao-Hui Huang, Tung-Li Lee, Chih-Hao Lin, Yen-Fei Lin, James Sun, Chen Pu-Fang, David Huang
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The present invention relates to a method for increasing the grain size of a polysilicon layer, which includes exposing a silicon oxide wafer in a deposition chamber to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute (slm). The instant invention further relates to a method for inhibiting the formation of a polysilicon seed in a furnace, which includes the treatment as noted above. The invention also relates to a method for forming a polysilicon layer, including: forming a silicon oxide layer on a substrate, the silicon oxide layer having a plurality of oxygen molecules therein; exposing the silicon oxide layer to a predetermined amount of nitrogen-containing gas in a furnace, whereby a plurality of nitrogen molecules in the nitrogen-containing gas replaces at least part of the oxygen molecules in the silicon oxide layer; and forming a polysilicon layer on the silicon oxide layer.
In the manufacture of semiconductor devices, a method for increasing the grain size of a polysilicon layer in a furnace, which comprises exposing a silicon oxide wafer in a deposition chamber of the furnace to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute.
In the manufacture of semiconductor devices, a method for inhibiting the formation of a polysilicon seed in a furnace, which comprises exposing a silicon oxide wafer in a deposition chamber of the furnace to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute.
Dependencies are inferred from the claim text.