Semiconductor substrate cleaning apparatus and method
OwnerYoshihiro Ogawa, Hiroshi Tomitainventors
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Abstract
According to the present invention, there is provided a semiconductor substrate cleaning apparatus comprising: a support which supports a semiconductor substrate; a rotating mechanism which rotates the semiconductor substrate; a first supply unit which supplies a first treatment liquid to which an ultrasonic wave is added, to a surface, on which no circuit pattern is formed, of the semiconductor substrate; and a second supply unit which supplies a second treatment liquid to an edge of a surface, on which a circuit pattern is formed, of the semiconductor substrate.
Claims18
A semiconductor substrate cleaning apparatus comprising:
- a support which supports a semiconductor substrate;
- a rotating mechanism which rotates the semiconductor substrate;
- a first supply unit which supplies a first treatment liquid to which an ultrasonic wave is added, to a surface, on which no circuit pattern is formed, of the semiconductor substrate;
- and
- a second supply unit which supplies a second treatment liquid to an edge of a surface, on which a circuit pattern is formed, of the semiconductor substrate.
A semiconductor substrate cleaning apparatus comprising:
- a support which supports a semiconductor substrate;
- a rotating mechanism which rotates the semiconductor substrate;
- a supply unit which supplies a treatment liquid to which an ultrasonic wave is added, to a surface, on which no circuit pattern is formed, of the semiconductor substrate;
- and
- a controller which controls a rotational speed of the semiconductor substrate rotated by said rotating mechanism, thereby adjusting a moving amount by which the treatment liquid supplied to the surface on which no circuit pattern is formed moves to an edge of a surface on which a circuit pattern is formed.
A semiconductor substrate cleaning method comprising:
- supporting a semiconductor substrate;
- rotating the semiconductor substrate;
- and
- supplying a first treatment liquid to which an ultrasonic wave is added, to a surface, on which no circuit pattern is formed, of the semiconductor substrate, and supplying a second treatment liquid to an edge of a surface on which a circuit pattern is formed, or
- supplying a first treatment liquid to which an ultrasonic wave is added, to a surface, on which no circuit pattern is formed, of the semiconductor substrate, and controlling a rotational speed of the semiconductor substrate, thereby adjusting a moving amount by which the treatment solution supplied to the surface on which no circuit pattern is formed moves to an edge of a surface on which a circuit pattern is formed.
Dependencies are inferred from the claim text.