Plasma etching process
OwnerChih-Ning Wu, Wen-Sheng Chieninventors
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Abstract
A plasma etching process is described. A substrate having a low-k material layer and a metal hard mask layer sequentially formed thereon is provided, wherein the metal hard mask layer exposes a portion of the low-k material layer. The low-k material layer is then etched with plasma of a gas mixture of helium (He) and at least one fluorinated hydrocarbon by using the metal hard mask layer as a mask.
Claims19
A plasma etching process for removing a portion of a protective layer over a substrate to expose a conductive layer on the substrate, wherein at least one dielectric layer is located over the protective layer and at least one opening penetrates through the dielectric layer and exposes the portion of the protective layer, the plasma etching process comprising:
- etching the portion of the protective layer until the conductive layer is exposed, wherein a plasma used to etch the portion of the protective layer is generated from a gas mixture of helium (He) and at least one halogen-containing gas.
A method for forming an opening for a substrate having a conductive layer, an etching stop layer, at least one dielectric layer and a metal layer formed thereon sequentially, wherein a hole penetrates through the metal layer and the dielectric layer and exposes a portion of the etching stop layer, the method comprising:
- performing an etching process to remove the exposed portion of the etching stop layer until a portion of the conductive layer is exposed so that an opening is formed, wherein a gas mixture of helium (He) and at least one carbon fluoride is used in the etching process and the metal layer directly confronts a plasma generated from the gas mixture.
A method for forming a dual damascene opening, comprising:
- providing a substrate having a stack of a conductive layer, a protective layer, a low-k material layer and a metal hard mask layer thereon, wherein a rude dual damascene hole penetrates through the metal hard mask layer and the low-k material layer and exposes a portion of the protective layer;
- and
- etching the exposed protective layer with a plasma generated from a gas mixture of helium (He) and at least one carbon fluoride to transform the rude dual damascene hole into a dual damascene opening exposing a portion of the conductive layer.
Dependencies are inferred from the claim text.