Method for fabricating semiconductor device having stacked-gate structure
AssigneeNanya Technology Corporation
InventorsTzu-En Ho, Chih-Hao Chang, Chang-Rong Wu, Kuo-Hui Su
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Abstract
A method for fabricating a semiconductor a semiconductor device having a stacked-gate structure. A polysilicon layer is formed overlying a substrate, which is insulated from the substrate by a dielectric layer. A metal-flash layer is formed overlying the polysilicon layer, and then a tungsten nitride layer is formed overlying the titanium layer. The tungsten nitride layer is annealed using nitrogen and hydrogen gases. A tungsten layer and a cap layer are successively formed overlying the tungsten nitride layer.
Claims11
1-10. (canceled)
A method for fabricating a semiconductor device having a stacked-gate structure, comprising the steps of:
- forming a polysilicon layer overlying a substrate, insulated from the substrate by a dielectric layer;
- forming a metal-flash layer overlying the polysilicon layer;
- forming a tungsten nitride layer overlying the metal-flash layer;
- forming a tungsten layer overlying the tungsten nitride layer;
- and
- annealing the tungsten layer and the tungsten nitride layer using nitrogen and hydrogen gases.
Dependencies are inferred from the claim text.