Multilevel fabrication processing by functional regrouping of material deposition, lithography, and etching
AssigneeMassachusetts Institute of Technology
InventorsTymon Barwicz, Minghao Qi
Life of this patent
Estimating the term…
Abstract
A method of multilevel microfabrication processing is provided. The method includes providing a planar substrate that comprises one or more material layers. A first hardmask layer placed on top of the substrate is patterned into the lithographic pattern desired for the top lithographic layer. Subsequent hardmask layers are patterned until the number of hardmask layers equals the number of lithographic layers desired. The method includes etching into the substrate and stripping the top hardmask layer. Furthermore, the method includes alternating etching into the substrate and stripping the subsequent hardmask layers until the bottom hardmask layer is stripped.
Claims15
A method of multilevel microfabrication processing comprising:
- providing a planar substrate that comprises one or more material layers;
- patterning a first hardmask layer placed on top of the substrate into the lithographic pattern desired for the top lithographic layer;
- patterning subsequent hardmask layers until the number of hardmask layers equals the number of lithographic layers desired;
- etching into the substrate and stripping the top hardmask layer;
- and
- alternating etching into the substrate and stripping said subsequent hardmask layers until the bottom hardmask layer is stripped.
A method of forming a multilayered upturned structure comprising:
- providing a cladding structure;
- patterning a first hardmask layer placed on top of the cladding structure into the lithographic pattern desired for the top lithographic layer;
- patterning subsequent hardmask layers until the number of hardmask layers equals the number of lithographic layers desired;
- etching into the cladding structure and stripping the top hardmask layer;
- and
- alternating etching into the cladding structure and stripping said subsequent hardmask layers until the bottom hardmask layer is stripped.
Dependencies are inferred from the claim text.