Method of manufacturing polycrystalline Si film and manufacturing stacked transistor using the same

A method of manufacturing a stacked transistor, the method comprising:

• preparing an insulating substrate on which is formed a transistor that includes a poly-Si active layer, a gate insulating layer, and a gate, sequentially formed;
• forming an interconnection metal line at a predetermined distance from the gate;
• forming an insulating layer that covers the transistor and the interconnection metal line;
• forming an amorphous silicon layer on the insulating layer;
• forming a polycrystalline Si film crystallized in lateral directions on the insulating layer between the transistor and the interconnection metal line by annealing the amorphous silicon layer;
• and
• forming a transistor that includes a poly-Si active layer, a gate insulating layer, and a gate, using the polycrystalline Si film.