Semiconductor memory device and method for fabricating the same

A semiconductor memory device, comprising:

• a plurality of plugs formed in a first inter-layer insulation layer deposited on a substrate;
• a second inter-layer insulation layer formed on a structure containing the plurality of the plugs;
• a first conductive layer electrically connected to a first group of the plugs by passing through the second inter-layer insulation layer;
• a first capacitor formed on a second group of the plugs adjacent to the first group of the plugs by passing through the second inter-layer insulation layer and planarized at the same plane level of the second inter-layer insulation layer and the first conductive layer;
• a third inter-layer insulation layer formed on a structure containing the first capacitor and the first conductive layer;
• a second capacitor formed on a structure containing the first conductive layer, the second capacitor electrically connected to the first conductive layer by passing through the third inter-layer insulation layer;
• and
• a second conductive layer electrically connected to the first capacitor by passing through the third inter-layer insulation layer and planarized at the same level of the second capacitor and the third inter-layer insulation layer.