Inspection methods for a semiconductor device
AssigneePowerchip Seminconductor Corp.
InventorsLong-Hui Lin, Hsien-Te Lo, Chia-Yun Chen
Life of this patent
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Abstract
An inspection method for a semiconductor device is disclosed. The method includes providing a semiconductor device, performing heat treatment on the semiconductor device, and inspecting the semiconductor device utilizing electron beam to acquire an analysis image. The semiconductor device comprises a substrate, a plurality of gate electrodes protruding on the substrate, a blanket dielectric layer overlying the substrate and gate electrodes, and a plurality of polycrystalline silicon plugs, respectively disposed on the substrate between the gate electrodes, in the dielectric layer. A piping defect is detected by the analysis image showing an area with voltage contrast difference.
Claims20
An inspection method for a semiconductor device, comprising:
- providing a semiconductor device comprising a substrate, a plurality of gate electrodes protruding from the substrate, a blanket dielectric layer overlying the substrate and gate electrodes, and a plurality of polycrystalline silicon plugs, respectively disposed on the substrate between the gate electrodes, in the dielectric layer;
- performing heat treatment on the semiconductor device;
- and
- inspecting the semiconductor device utilizing electron beam to acquire an analysis image;
- wherein a piping defect is determined by the analysis image showing an area with voltage contrast difference.
An inspection method for a semiconductor device, comprising:
- providing a semiconductor device comprising a substrate, a dielectric layer overlying the substrate, and a plurality of polycrystalline silicon layers electrically isolated by the dielectric layer;
- performing heat treatment on the semiconductor device;
- and
- inspecting the semiconductor device utilizing electron beam to acquire an analysis image;
- wherein a piping defect is detected by the analysis image showing an area with voltage contrast difference.
Dependencies are inferred from the claim text.