Semiconductor processing apparatus and method

A semiconductor processing apparatus comprising:

• a process chamber configured to accommodate a target substrate;
• a gas supply system configured to supply a process gas into the process chamber;
• an exhaust unit configured to exhaust the process chamber;
• an exhaust line connecting the process chamber to the exhaust unit;
• an opening variable valve disposed on the exhaust line;
• a first inactive gas line connected to the exhaust line on an upstream side of the opening variable valve to introduce a first inactive gas;
• a second inactive gas line connected to the exhaust line on a downstream side of the opening variable valve to introduce a second inactive gas;
• and
• a pressure control mechanism configured to control a pressure in the process chamber by adjusting at least one of an opening ratio of the opening variable valve and a flow rate of the second inactive gas during a process in the process chamber while causing the exhaust unit to exhaust the process chamber and introducing the first inactive gas and the second inactive gas from the first inactive gas line and the second inactive gas line, respectively, into the exhaust line.

A processing method of a semiconductor processing apparatus which includes:

• a process chamber configured to accommodate a target substrate;
• a gas supply system configured to supply a process gas into the process chamber;
• an exhaust unit configured to exhaust the process chamber;
• an exhaust line connecting the process chamber to the exhaust unit;
• an opening variable valve disposed on the exhaust line;
• and
• an inactive gas line connected to the exhaust line on an upstream side of the opening variable valve to introduce an inactive gas,
• the method comprising:
• supplying the process gas into the process chamber while exhausting the process chamber, and executing a process for the target substrate in the process chamber;
• and
• controlling a pressure in the process chamber by adjusting at least one of an opening ratio of the opening variable valve and a flow rate of the inactive gas during the process while introducing the inactive gas from the inactive gas line into the exhaust line.

A processing method of a semiconductor processing apparatus which includes:

• a process chamber configured to accommodate a target substrate;
• a gas supply system configured to supply a process gas into the process chamber;
• an exhaust unit configured to exhaust the process chamber;
• an exhaust line connecting the process chamber to the exhaust unit;
• an opening variable valve disposed on the exhaust line;
• a first inactive gas line connected to the exhaust line on an upstream side of the opening variable valve to introduce a first inactive gas;
• and
• a second inactive gas line connected to the exhaust line on a downstream side of the opening variable valve to introduce a second inactive gas, the method comprising:
• supplying the process gas into the process chamber while exhausting the process chamber, and executing a process for the target substrate in the process chamber;
• and
• controlling a pressure in the process chamber by adjusting at least one of an opening ratio of the opening variable valve and a flow rate of the second inactive gas during the process while introducing the first inactive gas and the second inactive gas from the first inactive gas line and the second inactive gas line, respectively, into the exhaust line.