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US 2006/0134559 A1Published application
Method for forming patterns on a semiconductor device
OwnerJeong Hainventor
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Abstract
A method for fabricating patterns of a semiconductor device to obtain the minute line width and to improve the characteristics of a device includes coating a first photoresist on a wafer, coating a second photoresist on the first photoresist, selectively exposing the second photoresist to light having a first wavelength, selectively exposing the first photoresist to light having a second wavelength, wherein the second wavelength is shorter than the first wavelength, and forming first and second photoresist patterns by developing the exposed first and second photoresists.
Claims5
A method for forming patterns of semiconductor device comprising:
- coating a first photoresist on a wafer;
- coating a second photoresist on the first photoresist;
- selectively exposing the second photoresist to a light having a first wavelength;
- selectively exposing the first photoresist to a light having a second wavelength, wherein the second wavelength is shorter than the first wavelength;
- and
- forming first and second photoresist patterns by developing the exposed first and second photoresists.
3 more elements
Dependencies are inferred from the claim text.