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AssigneeSony Corporation
InventorsKazuhisa Ogawa, Satomi Nakamura, Kazuyoshi Kawahara
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A method is provided for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process. The method includes the steps of extracting an isolated pattern having an optically isolated portion from the mask pattern and providing, in an adjacent pattern extending parallel to the isolated portion of the isolated pattern and having a terminal end, an extended portion extending from the terminal end next to the isolated portion of the isolated pattern along a direction in which the isolated portion of the isolated pattern extends.
A method for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process, comprising the steps of:
A method for correcting a mask pattern to be formed on a photomask used in a lithographic step of a semiconductor device fabrication process, comprising the steps of:
A photomask used in a lithographic step of a semiconductor device fabrication process, comprising:
A photomask used in a lithographic step of a semiconductor device fabrication process, comprising:
A photomask formed by correcting design pattern data including a plurality of design patterns, performing electron beam writing on an electron beam resist formed on a mask blank according to an electron beam writing pattern created on the basis of the corrected design pattern data, and etching the mask blank using an etching mask formed by developing the electron beam resist, wherein the step of correcting design pattern data comprises the substeps of:
A photomask formed by correcting design pattern data including a plurality of design patterns, performing electron beam writing on an electron beam resist formed on a mask blank according to an electron beam writing pattern created on the basis of the corrected design pattern data, and etching the mask blank using an etching mask formed by developing the electron beam resist, wherein the step of correcting design pattern data comprises the substeps of:
A method for fabricating a photomask, comprising the steps of:
A method for fabricating a photomask, comprising the steps of:
An electron beam writing method comprising the steps of:
An electron beam writing method comprising the steps of:
An exposure method comprising the steps of:
An exposure method comprising the steps of:
A method for fabricating a semiconductor device, comprising the steps of:
A method for fabricating a semiconductor device, comprising the steps of:
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device fabricated by irradiating a photomask with exposure light, transferring a mask pattern formed in the photomask onto a photoresist formed on a base substrate, and etching the base substrate using an etching mask obtained by developing the photoresist, the photomask being formed by correcting design pattern data including a plurality of design patterns, performing electron beam writing on an electron beam resist formed on a mask blank according to an electron beam writing pattern created on the basis of the corrected design pattern data, and etching the mask blank using an etching mask formed by developing the electron beam resist, wherein the step of correcting design pattern data comprises the substeps of:
A semiconductor device fabricated by irradiating a photomask with exposure light, transferring a mask pattern formed in the photomask onto a photoresist formed on a base substrate, and etching the base substrate using an etching mask obtained by developing the photoresist, the photomask being formed by correcting design pattern data including a plurality of design patterns, performing electron beam writing on an electron beam resist formed on a mask blank according to an electron beam writing pattern created on the basis of the corrected design pattern data, and etching the mask blank using an etching mask formed by developing the electron beam resist, wherein the step of correcting design pattern data comprises the substeps of:
Dependencies are inferred from the claim text.