Mask making method, mask making device, and mask drawing device

A method of writing a mask for use in manufacturing a semiconductor device, characterized by using a mask pattern projecting apparatus using light control elements arranged in a two-dimensional array, a first reduction-projection optical apparatus, and a second reduction-projection optical apparatus, controlling said light control elements based on mask pattern data to thereby output a first mask pattern from said mask pattern projecting apparatus, inputting said first mask pattern into said first reduction-projection optical apparatus to thereby form a reduced second mask pattern, and inputting said second mask pattern into said second reduction-projection optical apparatus to thereby form a further reduced third mask pattern.

A system for writing a mask for use in manufacturing a semiconductor device, characterized by comprising a mask pattern projecting apparatus using light control elements arranged in a two-dimensional array and a reduction-projection optical apparatus, controlling said light control elements based on mask pattern data to thereby output a first mask pattern from said mask pattern projecting apparatus, and inputting said first mask pattern into said reduction-projection optical apparatus to thereby form a reduced second mask pattern.

A system for writing a mask for use in manufacturing a semiconductor device, characterized by comprising a mask pattern projecting apparatus using light control elements arranged in a two-dimensional array, a first reduction-projection optical apparatus, and a second reduction-projection optical apparatus, controlling said light control elements based on mask pattern data to thereby output a first mask pattern from said mask pattern projecting apparatus, inputting said first mask pattern into said first reduction-projection optical apparatus to thereby form a reduced second mask pattern, and inputting said second mask pattern into said second reduction-projection optical apparatus to thereby form a further reduced third mask pattern.

A mask lithography system characterized by comprising a plurality of sets of pattern projecting apparatuses each using light control elements arranged in a two-dimensional array and a microlens array, wherein a mask substrate is moved so that exposure areas caused by two patterns projected onto said mask substrate from the adjacent pattern projecting apparatuses are connected to each other.

A mask lithography system characterized by comprising a plurality of sets of pattern projecting apparatuses each using light control elements arranged in a two-dimensional array and a microlens array, and mask substrate retaining means movable in at least one direction, wherein said plurality of sets of pattern projecting apparatuses are disposed so that a plurality of output luminous fluxes from said pattern projecting apparatuses are seen as a single luminous flux without separating from each other when observed from said one direction.

A mask lithography system characterized by comprising a plurality of sets of pattern projecting apparatuses each using light control elements arranged in a two-dimensional array and a microlens array, and mask substrate retaining means movable in at least one direction, wherein said plurality of pattern projecting apparatuses are disposed so that a plurality of exposure areas formed on a mask substrate by a plurality of output luminous fluxes from said pattern projecting apparatuses are formed at different spatial portions on said mask substrate with no separate portion at a time instant when movement of said mask substrate in said one direction is completed.