Via etch monitoring
AssigneeSilTerra Malaysia Sdn. Bhd.
InventorsChin Cheah, Kandasamy Sundaram, Rajagopal Ramakrishnan, Arjun Kumar
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Abstract
A method for monitoring the depth of at least one via (11) in a wafer comprising the steps of arranging the via (11) as a capacitive plate (21), providing a corresponding capacitive plate (23), applying an electrical potential difference to the via (11) and the corresponding capacitive plate (23), measuring the resultant capacitance between the via (11) and a corresponding capacitive plate (23) and determining the depth of the at least one via (11) by the capacitance.
Claims9
A method for determining a property of a via in a wafer comprising the steps of:
- using the via as a first capacitive member;
- providing a second capacitive member;
- applying an electrical potential difference across the via and the corresponding capacitive member;
- measuring the resultant capacitance between the via and the second capacitive member;
- and
- determining the property of the via from the capacitance.
Use of capacitance to monitor via depth and/or via placement.
Dependencies are inferred from the claim text.