Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications

Abstract

An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

Dependencies are inferred from the claim text.