Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsGaku Minamihaba, Hiroyuki Yano, Nobuyuki Kurashima, Susumu Yamamoto
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Abstract
Disclosed is a semiconductor device comprising a semiconductor substrate, a first insulating film formed above the semiconductor substrate, Cu wiring buried in the first insulating film, a second insulating film formed above the Cu wiring, and a discontinuous film made of at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn, or a metal oxide thereof and interposed at an interface between the Cu wiring and the second insulating film.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film formed above the semiconductor substrate;
- Cu wiring buried in the first insulating film;
- a second insulating film formed above the Cu wiring;
- and
- a discontinuous film made of at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn, or a metal oxide thereof and interposed at an interface between the Cu wiring and the second insulating film.
A method for manufacturing a semiconductor device comprising:
- forming a recess in a first insulating film formed above a semiconductor substrate;
- burying Cu wiring in the recess of the first insulating film with a barrier metal being interposed therebetween;
- treating the semiconductor substrate having the Cu wiring formed thereabove with an aqueous solution of metal soap containing at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn and drying the aqueous solution of metal soap to form a continuous film containing an oxide of the metal and an organic compound on the Cu wiring;
- and
- forming a second insulating film above the Cu wiring while removing the organic compound from the continuous film to turn the continuous film into a discontinuous film.
A method for manufacturing a semiconductor device comprising:
- forming a recess in a first insulating film formed above a semiconductor substrate;
- burying Cu wiring in the recess of the first insulating film with a barrier metal being interposed therebetween;
- treating the semiconductor substrate having the Cu wiring formed thereabove with an aqueous solution of metal soap containing at least one metal selected from the group consisting of Ti, Al, W, Pd, Sn, Ni, Mg and Zn and drying the aqueous solution of metal soap to form a continuous film containing an oxide of the metal and an organic compound on the Cu wiring;
- removing the organic compound from the continuous film to turn the continuous film into a discontinuous film;
- and
- forming a second insulating film above the Cu wiring having the discontinuous film formed thereon,
- wherein, throughout the process of removing the organic compound from the continuous film and forming the second insulating film, an atmosphere thereof is maintained in a reducing atmosphere or in a vacuum.
Dependencies are inferred from the claim text.