LOCOS-based junction-pinched schottky rectifier and its manufacturing methods

A LOCOS-based junction-pinched Schottky rectifier, comprising:

• a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises a lightly-doped epitaxial silicon layer being formed on a heavily-doped silicon substrate;
• a diffusion guard ring of a second conductivity type being surrounded by an outer LOCOS field oxide layer and formed in a surface portion of the lightly-doped epitaxial silicon layer, wherein a raised diffusion structure of the second conductivity type being surrounded by the raised diffusion guard ring is simultaneously formed in surface portions of the lightly-doped epitaxial silicon layer;
• a plurality of recessed semiconductor surfaces being formed on the lightly-doped epitaxial silicon layer surrounded by the raised diffusion guard ring and the raised diffusion structure, wherein the plurality of recessed semiconductor surfaces are formed by removing a plurality of inner LOCOS field oxide layers being formed on a plurality of compensated diffusion layers in surface portions of the lightly-doped epitaxial silicon layer;
• a metal contact region being formed on a portion of the raised diffusion guard ring, the plurality of compensated diffusion layers, and the raised diffusion structure;
• and
• a Schottky metal layer being at least formed over the metal contact region.

A LOCOS-based junction-pinched Schottky rectifier, comprising:

• a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises a lightly-doped epitaxial silicon layer being formed on a heavily-doped silicon substrate;
• a raised diffusion guard ring of a second conductivity type being surrounded by an outer LOCOS field oxide layer and formed in a surface portion of the lightly-doped epitaxial silicon layer, wherein a raised diffusion structure of the second conductivity type being surrounded by the raised diffusion guard ring is simultaneously formed in surface portions of the lightly-doped epitaxial silicon layer;
• a plurality of recessed semiconductor surfaces being formed on the lightly-doped epitaxial silicon layer between the raised diffusion guard ring and the raised diffusion structure, wherein the plurality of recessed semiconductor surfaces are formed by removing a plurality of inner LOCOS field oxide layers;
• a Schottky metal contact region being formed on a portion of the raised diffusion guard ring, the plurality of recessed semiconductor surfaces, and the raised diffusion structure;
• and
• a metal layer being at least formed over the Schottky metal contact region.